BSS126H6327XTSA2 vs SS0530 对比

详细并排对比 BSS126H6327XTSA2 出自 Infineon 和 SS0530 出自 Panjit。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS126H6327XTSA2 BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 ✓ 量产中

规格对比

参数 BSS126H6327XTSA2 SS0530
品牌 Infineon Panjit
分类 MOSFETs Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.03
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
封装 SOT-23-3 (PG-SOT23) SOD-123
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction, typical) —
引脚数量 3 —
Configuration Single Single
Channel Mode Depletion (normally-on at VGS = 0) —
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant (Pb-free matte tin finish)
Lead-Free Yes —
无卤 Yes (Infineon 'green' package) —
Manufacturer — Panjit International Inc.
Part Number — SS0530 (ordering code SS0530_R1_00001)
Device Type — Schottky Barrier Diode
Maximum Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum DC Blocking Voltage (VR) — 30 V
Maximum Average Rectified Forward Current (IF(AV)) — 0.5 A
Non-Repetitive Peak Forward Surge Current (IFSM) — 5.0 A
Forward Voltage Drop (Vf) — [DATA_NEEDED: Vf at rated IF]
Reverse Leakage Current (IR) — [DATA_NEEDED: IR at rated VR]
工作结温范围 — -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet)
Storage Temperature Range — -55 C to +150 C (typical)
Diode Family / Part Series — SS0520-SS0540 (Low-Vf Schottky)
Packaging — Tape and Reel (R1)

数据手册与资源

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