BSS138LT1G-VB vs BSS138LT1G Comparison

Detailed side-by-side comparison of BSS138LT1G-VB by VBsemi Elec and BSS138LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB βœ“ Active

Specification Comparison

Parameter BSS138LT1G-VB BSS138LT1G
Brand VBsemi Elec onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.02 $0.08
Transistor Type N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (Vdss) 50 V β€”
Continuous Drain Current (Id) 200 mA (Ta) β€”
Power Dissipation (Pd) 225 mW (Ta) β€”
Mounting Type Surface Mount Surface Mount
Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] β€”
RDS(on) Max [DATA_NEEDED: RDS(on)] β€”
Drive Voltage [DATA_NEEDED: drive voltage] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS Status Compliant Compliant (RoHS Compliant and Pb-free per Easybom)
Manufacturer VBsemi Elec β€”
Equivalent To onsemi BSS138LT1G β€”
Drain-Source Voltage (VDS) β€” 50 V
Continuous Drain Current (ID) β€” 200 mA (Ta)
Power Dissipation (PD) β€” 225 mW (Ta)
On-Resistance Max (RDS(on)) β€” 3.5 ohm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) β€” [DATA_NEEDED: maximum gate-source voltage]
Channel Mode β€” Enhancement Mode
Product Family β€” BSS138LT Series Small Signal MOSFET
Typical Applications β€” Computers, printers, cordless phones, DC-DC converters

Datasheets & Resources

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