BSS138LT1G-VB vs BSS138LT1G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138LT1G-VB disebabkan oleh VBsemi Elec dan BSS138LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138LT1G-VB BSS138LT1G
Merek VBsemi Elec onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 200 mA (Ta) —
Power Dissipation (Pd) 225 mW (Ta) —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] —
RDS(on) Max [DATA_NEEDED: RDS(on)] —
Drive Voltage [DATA_NEEDED: drive voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS Compliant Compliant (RoHS Compliant and Pb-free per Easybom)
Manufacturer VBsemi Elec —
Equivalent To onsemi BSS138LT1G —
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 200 mA (Ta)
Power Dissipation (PD) — 225 mW (Ta)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Channel Mode — Enhancement Mode
Product Family — BSS138LT Series Small Signal MOSFET
Typical Applications — Computers, printers, cordless phones, DC-DC converters

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