BSS138LT1G-VB vs BSS138LT1G Perbandingan

Perbandingan bersamaan detil BSS138LT1G-VB dari VBsemi Elec dan BSS138LT1G dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS138LT1G-VB BSS138LT1G
Merek VBsemi Elec onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 200 mA (Ta) —
Power Dissipation (Pd) 225 mW (Ta) —
Tipe Mounting Surface Mount Surface Mount
Paket SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] —
RDS(on) Max [DATA_NEEDED: RDS(on)] —
Drive Voltage [DATA_NEEDED: drive voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS Compliant Compliant (RoHS Compliant and Pb-free per Easybom)
Manufacturer VBsemi Elec —
Equivalent To onsemi BSS138LT1G —
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 200 mA (Ta)
Power Dissipation (PD) — 225 mW (Ta)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Channel Mode — Enhancement Mode
Product Family — BSS138LT Series Small Signal MOSFET
Typical Applications — Computers, printers, cordless phones, DC-DC converters

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