BSS806NEH6327XTSA1 vs BSS308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS806NEH6327XTSA1 by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS806NEH6327XTSA1 BSS308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.14 $0.11
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS806NEH6327XTSA1 β€”
Transistor Type N-Channel MOSFET P-Channel Enhancement Mode MOSFET
Mode of Operation Enhancement-mode β€”
Drain-Source Voltage (VDS) 20 V (maximum) -30 V
Continuous Drain Current (ID) 2.3 A (Ta) -2 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
On-Resistance RDS(on) 57 mOhm (maximum) β€”
Package PG-SOT23 (SOT-23-3) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Lead Plating Pb-free β€”
RoHS Compliance Yes (compliant) β€”
AEC-Q101 Qualification Qualified (automotive grade) β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 Β°C to +150 Β°C
Part Family β€” OptiMOS P (small signal / small power MOSFET)
RDS(on) Max β€” 80 mΞ© at VGS = -10 V
Gate-Source Voltage (VGS) Max β€” +/-20 V
Package / Case β€” PG-SOT23 (SOT-23-3)
Number of Pins β€” 3
Qualification β€” AEC-Q101 Automotive
RoHS Status β€” Compliant
Packaging β€” Tape & Reel (T/R)
Standard Reel Quantity β€” 3000 pcs
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]

Datasheets & Resources

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