BSS806NEH6327XTSA1 vs BSS308PEH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS806NEH6327XTSA1 dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSS806NEH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS806NEH6327XTSA1 | — |
| Tipe Transistor | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | -30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | -2 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Paket | PG-SOT23 (SOT-23-3) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Paket / Case | — | PG-SOT23 (SOT-23-3) |
| Jumlah Pin | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| Status RoHS | — | Compliant |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |