BSS87H6327FTSA1 vs BSP315PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSS87H6327FTSA1 by Infineon and BSP315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Active

Specification Comparison

Parameter BSS87H6327FTSA1 BSP315PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel enhancement-mode P-Channel
Drain-Source Voltage (VDS) 240 V -60 V
Continuous Drain Current (ID) 260 mA (Ta) -1.17 A (Ta)
Power Dissipation (PD) 1 W (Ta) 1.8 W (Ta)
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V ±20 V (max)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Package PG-SOT89-4-2 (SOT-89) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C (junction)
Pin Count 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
RoHS Status Compliant —
Lead-Free / Pb-Free Yes (Pb-free plating) —
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Process Technology Vertical DMOS —
Technology — OptiMOS (enhancement mode)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

Datasheets & Resources

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