BSS87H6327FTSA1 vs BSP315PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSP315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSP315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode P-Channel
Drain-Source Voltage (VDS) 240 V -60 V
Continuous Drain Current (ID) 260 mA (Ta) -1.17 A (Ta)
Power Dissipation (PD) 1 W (Ta) 1.8 W (Ta)
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V ±20 V (max)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Paket PG-SOT89-4-2 (SOT-89) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +150 C (junction)
Jumlah Pin 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Process Technology Vertical DMOS —
Technology — OptiMOS (enhancement mode)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

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