BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon
MPN: BSZ024N04LS6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.93 | $0.93 |
| 10 | $0.84 | $8.40 |
| 100 | $0.7 | $70.00 |
| 500 | $0.59 | $295.00 |
| 1,000 | $0.52 | $520.00 |
| 3,000 | $0.46 | $1,380.00 |
Drop-in alternatives for BSZ024N04LS6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ022N04LS6ATMA1
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IAUC60N04S6N044ATMA1
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View Datasheet →IAUC60N04S6N031HATMA1
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View Datasheet →BSZ070N08LS5ATMA1
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View Datasheet →BSZ096N10LS5ATMA1
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View Datasheet →BSZ024N04LS6ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS 6 (shielded-gate trench) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Ta) | 24 A |
| Continuous Drain Current (I_D, Tc) | 40 A |
| Pulsed Drain Current (I_DM) | 130 A |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC |
| Input Capacitance (C_iss) | 1.8 nF |
| Output Capacitance (C_oss) | 19 pF |
| Power Dissipation (P_D, Ta) | 2.5 W |
| Power Dissipation (P_D, Tc) | 75 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount, top-side drain pad |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
BSZ024N04LS6ATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin PAD | D (top) — Drain (top-side exposed thermal pad, electrically connected to drain) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
BSZ024N04LS6ATMA1 is suitable for 6 applications: Synchronous Rectification in 12V DC-DC Converters, ORing FET in Redundant 12V/24V Server Rails, USB-PD Charger Synchronous Rectifier, BLDC Motor Drive Half-Bridge, Hot-Swap / Load Switch Protection, Solar Charge Controller Power Path.
Synchronous Rectification in 12V DC-DC Converters
The BSZ024N04LS6ATMA1's 2.4 mΩ max R_DS(on) at V_GS=10V and 25 nC Qg make it ideal as the low-side synchronous rectifier in 12V-bus buck converters delivering 20-40A output. Placed on the secondary side of an isolated 24V-to-12V brick or as the low-side switch in a multi-phase VRM, its low on-resistance directly reduces conduction loss and improves overall efficiency at full load. The 40V V_DS rating provides comfortable headroom over a 12V nominal bus (including transients), while the source-down PG-TSDSON-8-FL package allows the drain to be cooled from the top side via thermal interface material, critical in space-constrained SMD layouts. Compared to a Schottky diode replacement, the synchronous MOSFET configuration typically gains 2-4% efficiency at the cost of needing a gate-drive IC and proper dead-time control to prevent shoot-through.
Recommended
ORing FET in Redundant 12V/24V Server Rails
The BSZ024N04LS6ATMA1 serves as an ideal ORing MOSFET in 12V or 24V redundant power architectures found in servers, telecom equipment, and industrial control systems. Its 2.4 mΩ max on-resistance minimizes voltage drop and power dissipation between paralleled power supplies, while the 40V V_DS rating easily exceeds typical 12V/24V bus voltages. In an ORing configuration, the source-down package allows the part to be placed with its drain facing the supply and source facing the load, and the top-side thermal pad handles the heat generated during steady-state operation. With up to 40A continuous current capability at Tc, a single BSZ024N04LS6ATMA1 can carry the full load of one power supply branch with comfortable thermal margin when properly heatsunk.
Recommended
USB-PD Charger Synchronous Rectifier
USB Power Delivery chargers rated 65W-100W typically use a 24V-class synchronous rectifier on the secondary side, and the BSZ024N04LS6ATMA1 is well matched to this role. Its 25 nC total gate charge enables efficient switching at the 200-400 kHz frequencies common in USB-PD designs, while the 2.4 mΩ max R_DS(on) keeps conduction losses below 1W at 20A output current. The PG-TSDSON-8-FL's compact 3.3 mm x 3.3 mm footprint supports high power density layouts required for travel adapters and GaN-based hybrid flyback topologies. Pairing the BSZ024N04LS6ATMA1 with a USB-PD controller such as those in the Infineon EZ-PD family yields a compact, thermally manageable solution that meets 94% peak efficiency targets.
Recommended
BLDC Motor Drive Half-Bridge
In battery-powered BLDC motor drives for tools, e-bikes, and small appliances, the BSZ024N04LS6ATMA1 functions as either the high-side or low-side switch in a three-phase half-bridge operating from a 24V-36V battery. Its 40V V_DS rating covers a fully charged 10S Li-ion pack with margin, and the 130A pulsed drain current rating handles motor start-up inrush and stall conditions. The low 19 pF output capacitance keeps switching losses manageable at the 20-50 kHz PWM frequencies typical of motor drives, while the 2.4 mΩ on-resistance keeps I²R losses low during continuous torque production. Source-down packaging simplifies PCB routing in three-phase designs, where multiple MOSFETs share a common thermal interface on top of the board.
Recommended
Hot-Swap / Load Switch Protection
The BSZ024N04LS6ATMA1 operates as a low-side protection switch in 12V/24V hot-swap controllers, where it must pass inrush current during board insertion while dissipating transient power safely. Its 130A pulsed drain current rating handles the brief surge when bulk capacitors charge, while the 40V V_DS provides safety margin beyond 24V nominal rails. The 2.4 mΩ max R_DS(on) in steady state keeps voltage drop below 100 mV at 40A, allowing downstream loads to see a near-nominal supply voltage. Combined with a hot-swap controller such as the ADM1177 or LTC4215, the BSZ024N04LS6ATMA1 forms a complete inrush-current-limited protection circuit for plug-in cards, server backplanes, and battery-disconnect applications.
Recommended
Solar Charge Controller Power Path
In MPPT solar charge controllers for 12V/24V battery systems, the BSZ024N04LS6ATMA1 serves as the synchronous rectifier on the buck-side converter that regulates current into the battery. Its 2.4 mΩ on-resistance maximizes conversion efficiency from a typical 30V open-circuit PV panel down to a 14V battery charging voltage, while the 40V V_DS rating tolerates 36V panel open-circuit voltage under cold conditions. The exposed top-side drain pad allows attachment to the metal chassis of outdoor enclosures for passive cooling under continuous solar loading. Compared with Schottky diode solutions, synchronous rectification with this MOSFET recovers 3-5% of harvested energy that would otherwise be lost to diode forward drop.
Recommended
Recommended Products Summary
Engineering reference data for BSZ024N04LS6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ022N04LS6ATMA1 | IAUC60N04S6N044ATMA1 | IAUC60N04S6N031HATMA1 | BSZ070N08LS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 40 V | 40 V | 60 V | 60 V | 80 V | 100 V |
| R_DS(on) max @ V_GS=10V | 2.4 mΩ | 2.2 mΩ | 4.4 mΩ | 3.1 mΩ | 7.0 mΩ | 9.6 mΩ |
| Continuous Drain Current (Tc) | 40 A | 40 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge (Qg) | 25 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Automotive Grade | No | No | No | No | No | No |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower R_DS(on) at 40V in a smaller footprint than most competitors (vs IRLR3636TRPBF (International Rectifier D-PAK))
- Source-down package enables top-side cooling (vs BSC022N04LS6ATMA1 (Infineon OptiMOS 6, drain-down))
- OptiMOS 6 generation vs older OptiMOS 5 (vs BSZ096N10LS5ATMA1 (OptiMOS 5, 100V))
Design Notes
Estimated: at continuous 30A drain current in the PG-TSDSON-8-FL package with R_DS(on)=2.4 mΩ, conduction loss is approximately 30² × 0.0024 = 2.16 W. Without an external heatsink, the 2.5 W Ta rating limits the part to roughly 32A continuous on a JEDEC 1s0p test board. For applications above 2 W dissipation, attach a thermal interface material (TIM) to the top-side drain pad and clamp a small copper or aluminum heatsink; this can extend continuous current capability to the full 40A Tc rating. Avoid relying solely on PCB bottom-side copper for cooling - the source-down configuration routes heat away from the PCB.
Layout the source-down PG-TSDSON-8-FL with the bottom source pad connected to a large copper pour that ties back to the power-ground plane. Place the gate-driver output within 5 mm of pin 4 (gate) and use a 10Ω gate-source resistor to prevent inadvertent turn-on from dV/dt-induced Miller coupling. Keep the high-current drain loop (drain-source-power loop) area to a minimum to control switching transients - target less than 50 mm² of loop area for 500 kHz switching. The top-side drain pad must NOT be soldered to a PCB land unless the design specifically intends a top-side thermal connection; typically the drain pad is left for heatsink contact only.
Do not assume 4.5V V_GS gives the same R_DS(on) as 10V drive - the part's R_DS(on) is rated at 10V V_GS, and 4.5V drive may increase on-resistance by 50-100%. Always size the gate-driver supply to deliver at least 8V-10V for full enhancement. Also avoid exceeding the 40V V_DS rating - in 24V bus systems, load-dump or inductive kickback transients can easily exceed 40V without adequate TVS or snubber protection. Finally, do not parallel BSZ024N04LS6ATMA1 parts without gate-source resistors on each device, as parallel MOSFETs can oscillate at MHz frequencies due to combined gate-drain capacitance.
The 25 nC total gate charge must be sourced and sunk within the desired switching transition time. For a 10 ns rise/fall time, the gate driver must supply I = Qg / t = 25 nC / 10 ns = 2.5 A peak. Most general-purpose gate drivers (e.g., TC4420, UCC27517) source/sink only 2 A, which yields ~12 ns transitions - acceptable for <300 kHz switching. For higher-frequency designs (>500 kHz), select a 4A peak gate driver such as the UCC27531 or Infineon 1EDN8511B. Place a small ferrite bead or 4.7Ω resistor in series with the gate to dampen parasitic ringing caused by the gate-driver output inductance combined with C_iss = 1.8 nF.
Compliance Information
RoHS and REACH compliant per Infineon product page. MSL 1 per JEDEC J-STD-020. Not AEC-Q100/AEC-Q101 qualified - select automotive-grade Infineon OptiMOS 6 variants for vehicle applications.
