IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon
MPN: IPD50N03S4L06ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 3,000 | $0.49 | $1,470.00 |
Drop-in alternatives for IPD50N03S4L06ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPD50N03S4L06ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DS) | 30 V |
| Continuous Drain Current (I_D, Tc) | 50 A |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | 2.33 nF |
| Output Capacitance (C_oss) | 600 pF |
| Reverse Transfer Capacitance (C_rss) | 34 pF |
| Power Dissipation (P_D) | 56 W at Tc = 25 C |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested |
| RoHS Status | Compliant (Green Package) |
IPD50N03S4L06ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; drive with >=10 V V_GS to achieve full 5.5 mOhm R_DS(on) |
| Pin 2 | Drain (D) — Drain connection; tied to the metal tab and to the load or high-side rail |
| Pin 3 | Source (S) — Source connection; typically tied to system ground for low-side switching |
Safe Operating Area (DC, Tc = 25 C)
Typical Applications
IPD50N03S4L06ATMA1 is suitable for 6 applications: Automotive 12V Motor Control (Fuel Pump, HVAC Blower, Water Pump), Electronic Power Steering (EPS) and Transmission ECUs, Body and Chassis ECUs (Lighting, Mirror, Seat Control), High-Current 12V DC-DC Converter Switching Stage, Reverse-Battery and Load-Dump Protection Circuits, Industrial 24V Brushed and Stepper Motor Drivers.
Automotive 12V Motor Control (Fuel Pump, HVAC Blower, Water Pump)
The IPD50N03S4L06ATMA1's 30 V V_DS, 50 A continuous I_D and 5.5 mOhm R_DS(on) at V_GS = 10 V make it well matched to brushed-DC automotive motor drivers running on a nominal 12 V bus with cranking transients. The DPAK package and 56 W P_D rating allow continuous motor currents of 25-35 A on a 1 sq-in 2 oz copper PCB footprint without an external heatsink. AEC-Q101 qualification supports under-hood deployment, and the 100% avalanche rating absorbs the inductive kick from motor turn-off. A typical circuit places the MOSFET on the low-side with a flyback Schottky or TVS across the motor and a 10 k gate resistor to damp PWM-edge ringing.
Recommended
Electronic Power Steering (EPS) and Transmission ECUs
Electronic power steering and automatic transmission ECUs demand AEC-Q101 grade N-channel MOSFETs with low R_DS(on) and tight thermal performance at sustained high current. The IPD50N03S4L06ATMA1 delivers 5.5 mOhm R_DS(on) and 56 W power dissipation in DPAK, fitting the 3-phase inverter and DC-DC stage of EPS modules where dozens of amps switch at 20 kHz PWM. The 175 C junction rating supports under-hood coolant temperatures, and the 31 nC total gate charge keeps switching losses manageable without a high-current gate driver. Engineers typically place one or two of these parts in parallel for higher current paths and de-rate by 70 percent for junction-temperature margin.
Recommended
Body and Chassis ECUs (Lighting, Mirror, Seat Control)
Body and chassis modules such as LED headlamp drivers, power mirror modules, and seat-adjustment ECUs use DPAK MOSFETs as low-side switches for loads in the 5-30 A range. The IPD50N03S4L06ATMA1's 5.5 mOhm R_DS(on) keeps conduction loss below 1 W at 15 A load, eliminating the need for an external heatsink on the body-module PCB. Its 30 V rating covers 12 V cold-cranking transients up to ~18 V, and AEC-Q101 + 175 C junction temperature support engine-bay and firewall-mounted ECU locations. Designers usually pair this MOSFET with a TVS on the drain and a 100 kohm gate pull-down to keep the FET off during MCU reset.
Recommended
High-Current 12V DC-DC Converter Switching Stage
In non-isolated buck and boost converters on the 12 V automotive bus, the IPD50N03S4L06ATMA1 serves as the main switch, delivering 30 V V_DS headroom and 31 nC Q_g for PWM frequencies up to ~100 kHz. With 5.5 mOhm R_DS(on), conduction losses stay low enough for 10-15 A continuous output without exotic thermal management. The DPAK tab provides a low-thermal-resistance path to inner-layer copper pours, enabling sustained switching at full load. Combined with a synchronous rectifier (often another low-R_DS(on) MOSFET), this part forms the heart of compact step-down POL converters for ADAS and infotainment processors.
Recommended
Reverse-Battery and Load-Dump Protection Circuits
Reverse-battery protection and load-dump clamping circuits in automotive power distribution need a low-R_DS(on) N-channel MOSFET in DPAK that can sustain high inrush current and absorb avalanche energy. The IPD50N03S4L06ATMA1's 100% avalanche-tested rating and 5.5 mOhm R_DS(on) make it appropriate as the main reverse-polarity disconnect switch, where a 50 A inrush may flow briefly at cold-crank. Its 30 V rating requires a TVS clamp to handle ISO 7637-2 load-dump pulses above 30 V, and the 175 C junction allows continuous conduction up to the thermal limit of the PCB copper. Designers often use two of these parts in back-to-back configuration for true bidirectional blocking.
Recommended
Industrial 24V Brushed and Stepper Motor Drivers
Industrial 24 V brushed DC and bipolar stepper motor drivers below ~15 A continuous current can use the IPD50N03S4L06ATMA1 as a low-side switch per phase, leveraging its 5.5 mOhm R_DS(on) to limit conduction loss and reduce heat-sinking. The 30 V V_DS rating covers 24 V nominal rails with margin for back-EMF spikes up to ~28 V, and the 175 C junction rating supports enclosed industrial cabinets at 60-70 C ambient. AEC-Q101 stress testing means the part also tolerates industrial shock, vibration, and thermal-cycling profiles. Engineers typically PWM at 20-40 kHz with a gate-driver IC and add 10-22 ohm gate resistors to control dV/dt ringing.
Recommended
Recommended Products Summary
Engineering reference data for IPD50N03S4L06ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90N04S403ATMA1 | IPG20N04S4L07ATMA1 | IPD031N03LGATMA1 | BSC028N06NSTATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| V_DS max | 30 V | 40 V | 40 V | 30 V | 60 V | 25 V |
| I_D max (Tc=25 C) | 50 A | 90 A | 120 A | 100 A | 100 A | [DATA_NEEDED] |
| R_DS(on) max @ V_GS=10V | 5.5 mOhm | 3.9 mOhm | 2.0 mOhm | 3.1 mOhm | 2.8 mOhm | 3.1 mOhm |
| Total Gate Charge Q_g | 31 nC @ 10 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| V_GS(th) typ | 2.2 V | [DATA_NEEDED] | [DATA_NEEDED] | ~1.7 V (logic level) | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation P_D max | 56 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Lower voltage rating optimized for 12 V automotive rails (vs IPG20N04S4L07ATMA1)
- Industry-standard DPAK footprint for drop-in second sourcing (vs BSC028N06NSTATMA1)
- Standard 10 V gate drive, not logic-level (vs IPD031N03LGATMA1)
Design Notes
Estimated: at I_D = 30 A and R_DS(on) = 5.5 mOhm, conduction loss is roughly P = I^2 * R = 30^2 * 0.0055 = 4.95 W. With a DPAK theta_JA of approximately 50 C/W on 1 sq-in 2 oz copper, junction temperature rise is about 248 C above 25 C ambient - exceeding the 175 C limit. Reduce continuous current to about 25 A or add a small heatsink tab to keep Tj below 150 C at 85 C ambient. Always derate automotive MOSFETs to a maximum Tj of 150 C for reliability margin.
The DPAK tab is electrically connected to the drain. Solder the tab to a copper pour that is also the drain thermal node, with thermal vias to inner planes to drop theta_JA. Provide a 6-8 mil solder paste layer and use the recommended land pattern from IPC-7351 (TO-252). Keep the gate-trace short (<10 mm) and surround it with ground to minimize gate-loop inductance that causes ringing at dV/dt edges above 5 V/ns.
Place the gate drive resistor (typically 10-22 ohm) within 5 mm of the gate pin. For high-current paths use 2 oz or 3 oz copper on the drain and source pours to limit resistive voltage drops and to spread heat. Add a 100 kohm gate-to-source pull-down so the MOSFET stays off if the gate driver loses power, and place a TVS (e.g. 33 V SMA) from drain to source for unclamped inductive switching protection when reverse-battery or load-dump transients are possible.
Driving this part with V_GS = 4.5 V (typical microcontroller rail) instead of 10 V will more than double R_DS(on) and push the part out of its thermal envelope. Do not parallel these FETs without individual gate-source resistors to suppress parasitic-oscillation. Verify the body diode's reverse-recovery behavior if used in a half-bridge without a synchronous rectifier - the OptiMOS body diode is fast but still requires dead-time control above 50 kHz PWM.
Compliance Information
AEC-Q101 automotive qualified per Infineon datasheet; MSL1 rated to 260 C peak reflow; Green Package (RoHS compliant) per Infineon product family marking. AEC-Q100 column used here to denote automotive-grade qualification since this is a discrete MOSFET qualified to AEC-Q101 (the automotive discrete analog of AEC-Q100 for ICs).
