BSZ110N08NS5ATMA1 vs BSC047N08NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ110N08NS5ATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOSβ’ 3 (N-channel trench) |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc | 40 A | 100 A |
| On-Resistance RDS(on) max | 11 mΞ© | 4.7 mOhm at VGS=10 V |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| Configuration | Single MOSFET | β |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 Β°C to +175 Β°C (Tj) |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Part Number | β | BSC047N08NS3GATMA1 |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Power Dissition (Tc) | β | 125 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Gate Threshold Voltage (VGS th) | β | Normal level (typ 1.7 V) |
| Avalanche Rated | β | 100% tested |
| RoHS / Halogen-Free | β | RoHS compliant, Halogen-free |