BSZ110N08NS5ATMA1 vs BSC047N08NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSZ110N08NS5ATMA1 dari Infineon dan BSC047N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ110N08NS5ATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS™ 3 (N-channel trench) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | 100 A |
| On-Resistance RDS(on) max | 11 mΩ | 4.7 mOhm at VGS=10 V |
| Power Dissipation (PD) at Tc | 50 W | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C (Tj) |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Part Number | — | BSC047N08NS3GATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Power Dissition (Tc) | — | 125 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| Avalanche Rated | — | 100% tested |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |