BSZ110N08NS5ATMA1 vs BSZ150N10LS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon at BSZ150N10LS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ110N08NS5ATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | 15 mΩ |
| Power Dissipation (PD) at Tc | 50 W | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Part Number | — | BSZ150N10LS3GATMA1 |
| Technology / Family | — | OptiMOS 3 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | — | 40 A |
| Power Dissipation (TA=25 °C) | — | 2.1 W |
| Pwersang Pinahihigpit (TC=25°C) | — | 63 W |
| Operating Temperature Range (TJ) | — | -55 °C to +150 °C |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | — | Yes (lead-free, 260 °C peak reflow compatible) |