CGD65A055S2 vs CGD65C025SP2 Comparison
Detailed side-by-side comparison of CGD65A055S2 by Cambridge GaN Devices and CGD65C025SP2 by Cambridge GaN Devices. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ ActiveCambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ ActiveSpecification Comparison
| Parameter | CGD65A055S2 | CGD65C025SP2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Category | Transistors | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.85 | $4.10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Continuous Drain Current (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN® (no negative gate supply required) |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Package | 16-pin DFN 8x8 mm | BHDFN-9-1 (surface-mount, wettable flank) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement mode (normally-off) |
| RoHS Status | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Polarity | Single FET | — |
| Part Number | — | CGD65C025SP2 |
| Transistor Type | — | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 60 A |
| On-Resistance (R_DS(on)) | — | 25 mΩ (typical) |
| Configuration | — | Single N-Channel |
| Material | — | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | — | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | — | Preliminary (May 2024) |
| AEC-Q100 Qualification | — | unknown |