CGD65A055S2 vs CGD65C025SP2 Vergleich
Detaillierter Direktvergleich von CGD65A055S2 von Cambridge GaN Devices und CGD65C025SP2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktivCambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ AktivSpezifikationsvergleich
| Parameter | CGD65A055S2 | CGD65C025SP2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | Transistors | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,85 | $4,10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN® (no negative gate supply required) |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Gehäuse | 16-pin DFN 8x8 mm | BHDFN-9-1 (surface-mount, wettable flank) |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement mode (normally-off) |
| RoHS-Status | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Polarity | Single FET | — |
| Part Number | — | CGD65C025SP2 |
| Transistortyp | — | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 60 A |
| On-Resistance (R_DS(on)) | — | 25 mΩ (typical) |
| Configuration | — | Single N-Channel |
| Material | — | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | — | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | — | Preliminary (May 2024) |
| AEC-Q100 Qualification | — | unknown |