CGD65A055S2 vs CGD65C025SP2 Comparación
Comparación detallada lado a lado de CGD65A055S2 por Cambridge GaN Devices y CGD65C025SP2 por Cambridge GaN Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ ActivoCambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ ActivoComparación de especificaciones
| Parámetro | CGD65A055S2 | CGD65C025SP2 |
|---|---|---|
| Marca | Cambridge GaN Devices | Cambridge GaN Devices |
| Categoría | Transistors | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,85 | $4,10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Corriente de drenador continua (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN® (no negative gate supply required) |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Encapsulado | 16-pin DFN 8x8 mm | BHDFN-9-1 (surface-mount, wettable flank) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement mode (normally-off) |
| Estado RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Polarity | Single FET | — |
| Part Number | — | CGD65C025SP2 |
| Tipo de transistor | — | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 60 A |
| On-Resistance (R_DS(on)) | — | 25 mΩ (typical) |
| Configuration | — | Single N-Channel |
| Material | — | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | — | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | — | Preliminary (May 2024) |
| AEC-Q100 Qualification | — | unknown |