CY14B101J2 vs CY14B101J2-SXI Comparison

Detailed side-by-side comparison of CY14B101J2 by Infineon and CY14B101J2-SXI by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter CY14B101J2 CY14B101J2-SXI
Brand Infineon Infineon
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type nvSRAM (Non-Volatile SRAM) nvSRAM (Non-Volatile SRAM)
Density 1 Mbit (1049 kbits) 1049 kbits
Organization 128K x 8 128K x 8
Interface I2C (Serial) I2C Serial (2-wire)
Max Clock Frequency 3.4 MHz —
Data Retention 20 years 20 years
Supply Voltage [DATA_NEEDED: supply voltage range] [DATA_NEEDED: supply voltage range]
Store Cycles [DATA_NEEDED: minimum non-volatile store cycles] —
SRAM Read/Write Cycles Unlimited (per nvSRAM architecture) —
Address Pins A0, A1, A2 —
Automatic Store Yes (internal power-fail detection) —
Package 16-SOIC (MO-119, 0.300 inch) —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS Status RoHS Compliant RoHS Compliant
Real Time Clock [DATA_NEEDED: RTC availability] —
Memory Size — 1 Mbit
Maximum Clock Frequency — 3.4 MHz
Package Type — 8-SOIC (0.300 inch, MO-119 family)
Write Endurance — Unlimited SRAM reads/writes; non-volatile STORE endurance [DATA_NEEDED: STORE endurance]
Store Mechanism — Software / auto-store with external VCAP capacitor
Packaging — Tube

Datasheets & Resources

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