EP3SE260F1517I3N vs EP3SE260F1517C4N Comparison
Detailed side-by-side comparison of EP3SE260F1517I3N by Intel and EP3SE260F1517C4N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP3SE260F1517I3N | EP3SE260F1517C4N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | NRND |
| Family | Stratix® III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| User I/O Count | 976 | — |
| Core Voltage | 1.1 V | 0.9 V |
| Process Technology | 65 nm | — |
| Package | 1517-ball FC-FBGA | 1517-BBGA, FCBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade | -3 (fastest) | — |
| Temperature Grade | Industrial (I): -40 °C to +100 °C | — |
| Operating Junction Temperature | -40 °C to +100 °C | — |
| Configuration Method | JTAG / Passive Serial / Active Serial | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Internal Logic Performance | Up to 500 MHz | — |
| Memory Subsystems | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers | — |
| DSP Blocks | Yes (dedicated multiply-accumulate) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Maximum User I/Os | — | 976 |
| Operating Temperature | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| MSL Level | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |