EP3SE260F1517I3N vs EP3SE260F1517C4N Perbandingan
Perbandingan bersamaan detil EP3SE260F1517I3N dari Intel dan EP3SE260F1517C4N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3SE260F1517I3N | EP3SE260F1517C4N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Obsolete | NRND |
| Family | Stratix® III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| User I/O Count | 976 | — |
| Core Voltage | 1.1 V | 0.9 V |
| Process Technology | 65 nm | — |
| Paket | 1517-ball FC-FBGA | 1517-BBGA, FCBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Speed Grade | -3 (fastest) | — |
| Temperature Grade | Industrial (I): -40 °C to +100 °C | — |
| Suhu Hubung Kerja | -40 °C to +100 °C | — |
| Configuration Method | JTAG / Passive Serial / Active Serial | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Internal Logic Performance | Up to 500 MHz | — |
| Memory Subsystems | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers | — |
| DSP Blocks | Yes (dedicated multiply-accumulate) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Maximum User I/Os | — | 976 |
| Suhu Kerja | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |