EP3SE260F1517I3N vs EP3SE260F1517C4N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260F1517I3N disebabkan oleh Intel dan EP3SE260F1517C4N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3SE260F1517I3N | EP3SE260F1517C4N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Obsolete | NRND |
| Family | Stratix® III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| User I/O Count | 976 | — |
| Core Voltage | 1.1 V | 0.9 V |
| Process Technology | 65 nm | — |
| Kemasan | 1517-ball FC-FBGA | 1517-BBGA, FCBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | -3 (fastest) | — |
| Temperature Grade | Industrial (I): -40 °C to +100 °C | — |
| Suhu Hubungan Operasi | -40 °C to +100 °C | — |
| Configuration Method | JTAG / Passive Serial / Active Serial | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Internal Logic Performance | Up to 500 MHz | — |
| Memory Subsystems | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers | — |
| DSP Blocks | Yes (dedicated multiply-accumulate) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Maximum User I/Os | — | 976 |
| Suhu Operasi | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |