EP3SE260F1517I3N vs EP3SE260F1517C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517I3N sa pamamagitan ng Intel at EP3SE260F1517C4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517I3N | EP3SE260F1517C4N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | NRND |
| Family | Stratix® III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory Bits | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| User I/O Count | 976 | — |
| Core Voltage | 1.1 V | 0.9 V |
| Process Technology | 65 nm | — |
| Packhaging | 1517-ball FC-FBGA | 1517-BBGA, FCBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade | -3 (fastest) | — |
| Temperature Grade | Industrial (I): -40 °C to +100 °C | — |
| Temperature ng Junction na Operasyon | -40 °C to +100 °C | — |
| Configuration Method | JTAG / Passive Serial / Active Serial | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Internal Logic Performance | Up to 500 MHz | — |
| Memory Subsystems | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers | — |
| DSP Blocks | Yes (dedicated multiply-accumulate) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Maximum User I/Os | — | 976 |
| Temperature na Operasyon | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |