EP3SE260H780C4LN vs EP3SE260H780C4LG Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C4LN sa pamamagitan ng Intel at EP3SE260H780C4LG sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel
EP3SE260H780C4LN ⚠ Huling PagbiliAltera
EP3SE260H780C4LG - Stratix III E FPGA, 488 I/O, 780-HBGA | Altera
EP3SE260H780C4LG ✓ NakahandaPagsanggunian na paghahambing
| Parametro | EP3SE260H780C4LN | EP3SE260H780C4LG |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Aktibo |
| Family | Stratix III E | Stratix III Enhanced (EP3SE) |
| Logic Elements | 255,000 | 254,400 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| Embedded Multipliers (18x18) | 384 | — |
| User I/O Count | 488 | — |
| Packhaging | 780-ball FCBGA (FineLine BGA) | 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch) |
| Speed Grade | C4 (commercial, moderate speed) | C4 (commercial, mid-speed tier) |
| Temperature na Operasyon | 0C to +85C (commercial) | — |
| Core Voltage (VCC) | 1.0 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Auxiliary Voltage (VCCPD/VCCPT) | 2.5 V / 3.0 V | — |
| PLLs | 8 | — |
| Global Clock Networks | 16 | — |
| Process Node | 40 nm TSMC | — |
| Configuration Modes | FPP, AS, PS, JTAG | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free HBGA) |
| Level ng MSL | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Adaptive Logic Modules (ALMs) | — | 101,760 |
| Embedded Memory (M9K + M144K) | — | 18.36 Mbits |
| DSP Blocks (18-bit x 18-bit) | — | 768 |
| 18-bit x 18-bit Multipliers | — | 1,536 |
| Transceivers (full-duplex) | — | 8 (up to 6.375 Gbps) |
| Maximum User I/O Pins | — | 488 |
| Temperature Grade | — | Commercial (0C to +85C junction) |
| Process Technology | — | 65 nm TSMC low-power CMOS |
| Operating Voltage (Core) | — | 0.9 V / 1.0 V / 1.1 V (programmable) |
| External Memory Interface | — | Up to 800 Mbps DDR3, QDR II+, RLDRAM II |
| Hard IP Blocks | — | PCIe Gen2, 10GbE MAC, memory controllers |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |