EP4CE40F29C6N vs EP4CE40F29C7 Comparison
Detailed side-by-side comparison of EP4CE40F29C6N by Intel and EP4CE40F29C7 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP4CE40F29C6N | EP4CE40F29C7 |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 | — |
| Embedded Memory Blocks | 113 M9K blocks | — |
| 18x18 Hardware Multipliers | 66 | — |
| PLLs | 4 general-purpose | 4 |
| Maximum User I/Os | 532 | — |
| Package | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Process Node | 60 nm | — |
| Core Voltage | 1.2 V (internal regulated) | 1.2 V |
| Operating Temperature | 0°C to +85°C (commercial) | 0C to +85C (Commercial, C7 speed grade) |
| Speed Grade | 6 | — |
| Configuration Modes | Serial, JTAG, Passive Serial, AS | Passive Serial, Active Serial, JTAG |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 | — |
| RoHS Status | Compliant | Compliant |
| Logic Elements (LE) | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 bits |
| Embedded 18x18 Multipliers | — | 113 |
| User I/O Count | — | 532 |
| Process Technology | — | 60 nm (TSMC low-power) |
| I/O Voltage Support | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Memory Interface Support | — | DDR, DDR2, QDR II, SDR |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL, LVTTL, LVCMOS |
| Lead-Free | — | Yes |