EP4CE40F29C6N vs EP4CE40F29C7 比較
詳細並排比較 EP4CE40F29C6N 由 Intel 與 EP4CE40F29C7 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP4CE40F29C6N | EP4CE40F29C7 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 | — |
| Embedded Memory Blocks | 113 M9K blocks | — |
| 18x18 Hardware Multipliers | 66 | — |
| PLLs | 4 general-purpose | 4 |
| Maximum User I/Os | 532 | — |
| 封裝 | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Process Node | 60 nm | — |
| Core Voltage | 1.2 V (internal regulated) | 1.2 V |
| 工作溫度 | 0°C to +85°C (commercial) | 0C to +85C (Commercial, C7 speed grade) |
| Speed Grade | 6 | — |
| Configuration Modes | Serial, JTAG, Passive Serial, AS | Passive Serial, Active Serial, JTAG |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 3 | — |
| RoHS 狀態 | Compliant | Compliant |
| Logic Elements (LE) | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 bits |
| Embedded 18x18 Multipliers | — | 113 |
| User I/O Count | — | 532 |
| Process Technology | — | 60 nm (TSMC low-power) |
| I/O Voltage Support | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Memory Interface Support | — | DDR, DDR2, QDR II, SDR |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL, LVTTL, LVCMOS |
| Lead-Free | — | Yes |