EP4CE40F29C6N vs EP4CE40F29C7 Perbandingan
Perbandingan bersamaan detil EP4CE40F29C6N dari Intel dan EP4CE40F29C7 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE40F29C6N | EP4CE40F29C7 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 | — |
| Embedded Memory Blocks | 113 M9K blocks | — |
| 18x18 Hardware Multipliers | 66 | — |
| PLLs | 4 general-purpose | 4 |
| Maximum User I/Os | 532 | — |
| Paket | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Process Node | 60 nm | — |
| Core Voltage | 1.2 V (internal regulated) | 1.2 V |
| Suhu Kerja | 0°C to +85°C (commercial) | 0C to +85C (Commercial, C7 speed grade) |
| Speed Grade | 6 | — |
| Configuration Modes | Serial, JTAG, Passive Serial, AS | Passive Serial, Active Serial, JTAG |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 3 | — |
| Status RoHS | Compliant | Compliant |
| Logic Elements (LE) | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 bits |
| Embedded 18x18 Multipliers | — | 113 |
| User I/O Count | — | 532 |
| Process Technology | — | 60 nm (TSMC low-power) |
| I/O Voltage Support | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Memory Interface Support | — | DDR, DDR2, QDR II, SDR |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL, LVTTL, LVCMOS |
| Lead-Free | — | Yes |