EP4SGX110HF35I3G vs EP4S100G2F40I3G Comparison
Detailed side-by-side comparison of EP4SGX110HF35I3G by Intel and EP4S100G2F40I3G by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP4SGX110HF35I3G | EP4S100G2F40I3G |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7,900.00 | $5,680.00 |
| Logic Elements | 105,600 | 228,000 |
| Embedded Memory Bits | 9,793,536 (9.4 Mbit) | β |
| Maximum User I/O Pins | 488 | β |
| Multipliers (18x18) | 352 | β |
| Core Supply Voltage (nominal) | 0.9 V | β |
| Package | 1152-ball FC-FBGA (HF35), 35 x 35 mm, 1.0 mm pitch | 1517-BBGA, FCBGA (40x40 mm) |
| Family | Stratix IV GX | Stratix IV |
| Speed/Grade | I3 (Industrial, -3 speed) | β |
| Operating Junction Temperature | -40 C to +100 C | β |
| Multi-Gigabit Transceivers | 8 channels (3.125 Gbps to 8.5 Gbps per family datasheet) | β |
| Hard IP Blocks | PCIe Gen1/Gen2, external memory PHY | β |
| Mounting Type | Surface Mount (Flip-Chip BGA) | Surface Mount (BGA) |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free | β |
| Process Technology | 40 nm low-power CMOS | 40 nm |
| Configuration Memory | SRAM-based (volatile, requires configuration device) | β |
| Series | β | Stratix IV GT |
| Logic Array Blocks (LABs) | β | 91,200 |
| Total RAM Bits | β | 17,544,192 |
| Operating Voltage (Core) | β | 0.86 V to 1.15 V |
| Operating Temperature Range | β | -40 Β°C to 100 Β°C Tj (industrial) |
| Number of I/O | β | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | β | [DATA_NEEDED: number of high-speed transceivers] |
| DSP Blocks | β | [DATA_NEEDED: DSP block count] |
| User Flash Memory | β | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | β | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Moisture Sensitivity Level (MSL) | β | 3 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |