EP4SGX110HF35I3G vs EP4S100G2F40I3G Сравнение
Подробное сравнение бок о бок EP4SGX110HF35I3G от Intel и EP4S100G2F40I3G от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | EP4SGX110HF35I3G | EP4S100G2F40I3G |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | NRND | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $7.900,00 | $5.680,00 |
| Logic Elements | 105,600 | 228,000 |
| Embedded Memory Bits | 9,793,536 (9.4 Mbit) | — |
| Maximum User I/O Pins | 488 | — |
| Multipliers (18x18) | 352 | — |
| Core Supply Voltage (nominal) | 0.9 V | — |
| Корпус | 1152-ball FC-FBGA (HF35), 35 x 35 mm, 1.0 mm pitch | 1517-BBGA, FCBGA (40x40 mm) |
| Family | Stratix IV GX | Stratix IV |
| Speed/Grade | I3 (Industrial, -3 speed) | — |
| Рабочая температура перехода | -40 C to +100 C | — |
| Multi-Gigabit Transceivers | 8 channels (3.125 Gbps to 8.5 Gbps per family datasheet) | — |
| Hard IP Blocks | PCIe Gen1/Gen2, external memory PHY | — |
| Тип монтажа | Surface Mount (Flip-Chip BGA) | Surface Mount (BGA) |
| Уровень MSL | [DATA_NEEDED: MSL level] | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free | — |
| Process Technology | 40 nm low-power CMOS | 40 nm |
| Configuration Memory | SRAM-based (volatile, requires configuration device) | — |
| Series | — | Stratix IV GT |
| Logic Array Blocks (LABs) | — | 91,200 |
| Total RAM Bits | — | 17,544,192 |
| Operating Voltage (Core) | — | 0.86 V to 1.15 V |
| Диапазон рабочих температур | — | -40 °C to 100 °C Tj (industrial) |
| Number of I/O | — | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | — | [DATA_NEEDED: number of high-speed transceivers] |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| User Flash Memory | — | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | — | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Уровень чувствительности к влаге (MSL) | — | 3 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |