EP4SGX110HF35I3G vs EP4S100G2F40I3G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4SGX110HF35I3G sa pamamagitan ng Intel at EP4S100G2F40I3G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4SGX110HF35I3G | EP4S100G2F40I3G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Logic Elements | 105,600 | 228,000 |
| Embedded Memory Bits | 9,793,536 (9.4 Mbit) | — |
| Maximum User I/O Pins | 488 | — |
| Multipliers (18x18) | 352 | — |
| Core Supply Voltage (nominal) | 0.9 V | — |
| Packhaging | 1152-ball FC-FBGA (HF35), 35 x 35 mm, 1.0 mm pitch | 1517-BBGA, FCBGA (40x40 mm) |
| Family | Stratix IV GX | Stratix IV |
| Speed/Grade | I3 (Industrial, -3 speed) | — |
| Temperature ng Junction na Operasyon | -40 C to +100 C | — |
| Multi-Gigabit Transceivers | 8 channels (3.125 Gbps to 8.5 Gbps per family datasheet) | — |
| Hard IP Blocks | PCIe Gen1/Gen2, external memory PHY | — |
| Uri ng Pagpapasok | Surface Mount (Flip-Chip BGA) | Surface Mount (BGA) |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free | — |
| Process Technology | 40 nm low-power CMOS | 40 nm |
| Configuration Memory | SRAM-based (volatile, requires configuration device) | — |
| Series | — | Stratix IV GT |
| Logic Array Blocks (LABs) | — | 91,200 |
| Total RAM Bits | — | 17,544,192 |
| Operating Voltage (Core) | — | 0.86 V to 1.15 V |
| Hanay ng Temperature na Operasyon | — | -40 °C to 100 °C Tj (industrial) |
| Number of I/O | — | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | — | [DATA_NEEDED: number of high-speed transceivers] |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| User Flash Memory | — | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | — | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |