EP4SGX110HF35I3G vs EP4S100G2F40I3G Vergleich
Detaillierter Direktvergleich von EP4SGX110HF35I3G von Intel und EP4S100G2F40I3G von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4SGX110HF35I3G | EP4S100G2F40I3G |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7.900,00 | $5.680,00 |
| Logic Elements | 105,600 | 228,000 |
| Embedded Memory Bits | 9,793,536 (9.4 Mbit) | — |
| Maximum User I/O Pins | 488 | — |
| Multipliers (18x18) | 352 | — |
| Core Supply Voltage (nominal) | 0.9 V | — |
| Gehäuse | 1152-ball FC-FBGA (HF35), 35 x 35 mm, 1.0 mm pitch | 1517-BBGA, FCBGA (40x40 mm) |
| Family | Stratix IV GX | Stratix IV |
| Speed/Grade | I3 (Industrial, -3 speed) | — |
| Betriebs-Sperrschichttemperatur | -40 C to +100 C | — |
| Multi-Gigabit Transceivers | 8 channels (3.125 Gbps to 8.5 Gbps per family datasheet) | — |
| Hard IP Blocks | PCIe Gen1/Gen2, external memory PHY | — |
| Montageart | Surface Mount (Flip-Chip BGA) | Surface Mount (BGA) |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free | — |
| Process Technology | 40 nm low-power CMOS | 40 nm |
| Configuration Memory | SRAM-based (volatile, requires configuration device) | — |
| Series | — | Stratix IV GT |
| Logic Array Blocks (LABs) | — | 91,200 |
| Total RAM Bits | — | 17,544,192 |
| Operating Voltage (Core) | — | 0.86 V to 1.15 V |
| Betriebstemperaturbereich | — | -40 °C to 100 °C Tj (industrial) |
| Number of I/O | — | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | — | [DATA_NEEDED: number of high-speed transceivers] |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| User Flash Memory | — | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | — | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 3 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |