EPF10K200EBI600-2N vs EPF10K250EBI600-3 Comparison

Detailed side-by-side comparison of EPF10K200EBI600-2N by Intel and EPF10K250EBI600-3 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Intel
EPF10K200EBI600-2N EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N Obsolete
Intel
EPF10K250EBI600-3 EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel

EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel

EPF10K250EBI600-3 ⚠ Last Time Buy

Specification Comparison

Parameter EPF10K200EBI600-2N EPF10K250EBI600-3
Brand Intel Intel
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status Obsolete Last_time_buy
Stock Status In Stock In Stock
Unit Price (USD) $140.00 $110.00
Family FLEX 10KE FLEX 10KE
Typical Gates 200,000 β€”
Maximum System Gates 513,000 β€”
Logic Elements (LEs) 9,984 β€”
Embedded Array Blocks (EABs) 12 β€”
Total RAM Bits 98,304 β€”
User I/O Pins 470 β€”
Dedicated Inputs 6 4
Package 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) 600-ball BGA (HBGA)
Technology / Process 0.22 Β΅m CMOS SRAM β€”
Core Supply Voltage 2.5 V (2.3 V to 2.7 V) β€”
I/O Supply Voltage 2.5 V / 3.3 V (5 V tolerant I/O available) β€”
Propagation Delay 0.4 ns to 0.6 ns (per LE) β€”
Maximum Internal Frequency 200 MHz β€”
Operating Temperature 0 Β°C to +70 Β°C (commercial) Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range]
Configuration Method SRAM, JTAG (IEEE 1149.1), serial configuration EPROM SRAM, requires external configuration device (EPC series)
MSL Level [DATA_NEEDED: moisture sensitivity level] β€”
RoHS Status [DATA_NEEDED: RoHS compliance status] Not specified (SnPb / tin-lead finish per legacy distributor listing)
Mounting Type Surface Mount (BGA) Surface Mount
Logic Elements β€” 12,160
Typical Gate Count β€” 250,000 system gates
Embedded System Blocks (ESBs) β€” 12
Maximum User I/O β€” 470
PLLs β€” 4
On-chip RAM β€” Up to 40 Kbits
Ball Pitch β€” 1.93 mm
Core Voltage β€” 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT]
Speed Grade β€” -3 (fastest)
Process Technology β€” 0.22 Β΅m CMOS, 4-layer metal
Lead-free β€” no (legacy tin-lead per distributor description)

Datasheets & Resources

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