EPF10K200EBI600-2N vs EPF10K250EBI600-3 Vergleich
Detaillierter Direktvergleich von EPF10K200EBI600-2N von Intel und EPF10K250EBI600-3 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel
EPF10K250EBI600-3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EPF10K200EBI600-2N | EPF10K250EBI600-3 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $140,00 | $110,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Typical Gates | 200,000 | — |
| Maximum System Gates | 513,000 | — |
| Logic Elements (LEs) | 9,984 | — |
| Embedded Array Blocks (EABs) | 12 | — |
| Total RAM Bits | 98,304 | — |
| User I/O Pins | 470 | — |
| Dedicated Inputs | 6 | 4 |
| Gehäuse | 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) | 600-ball BGA (HBGA) |
| Technology / Process | 0.22 µm CMOS SRAM | — |
| Core Supply Voltage | 2.5 V (2.3 V to 2.7 V) | — |
| I/O Supply Voltage | 2.5 V / 3.3 V (5 V tolerant I/O available) | — |
| Propagation Delay | 0.4 ns to 0.6 ns (per LE) | — |
| Maximum Internal Frequency | 200 MHz | — |
| Betriebstemperatur | 0 °C to +70 °C (commercial) | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] |
| Configuration Method | SRAM, JTAG (IEEE 1149.1), serial configuration EPROM | SRAM, requires external configuration device (EPC series) |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | Not specified (SnPb / tin-lead finish per legacy distributor listing) |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Logic Elements | — | 12,160 |
| Typical Gate Count | — | 250,000 system gates |
| Embedded System Blocks (ESBs) | — | 12 |
| Maximum User I/O | — | 470 |
| PLLs | — | 4 |
| On-chip RAM | — | Up to 40 Kbits |
| Ball Pitch | — | 1.93 mm |
| Core Voltage | — | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] |
| Speed Grade | — | -3 (fastest) |
| Process Technology | — | 0.22 µm CMOS, 4-layer metal |
| Lead-free | — | no (legacy tin-lead per distributor description) |