EPM570GF256C4N vs 5M2210ZF256C4N Comparison
Detailed side-by-side comparison of EPM570GF256C4N by Altera and 5M2210ZF256C4N by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Altera
EPM570GF256C4N - 570 LEs CPLD, 4ns, 212 I/O, FBGA-256 | Intel / Altera
EPM570GF256C4N ✓ ActiveAltera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ ActiveSpecification Comparison
| Parameter | EPM570GF256C4N | 5M2210ZF256C4N |
|---|---|---|
| Brand | Altera | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.45 | $7.29 |
| Family | MAX II G | MAX V |
| Device Series | EPM570G | — |
| Logic Elements (LEs) | 570 | 1700 |
| Macrocells | 440 | — |
| User I/Os | 212 | — |
| User Flash Memory (UFM) | 8 Kbits | — |
| Speed Grade | C4 (tPD = 4 ns) | C4 (tPD ~4 ns class) |
| Pin-to-Pin Delay (tPD) | 4 ns | — |
| Internal fMAX | 304 MHz | — |
| Package | 256-ball FineLine BGA (FBGA-256) | FBGA-256 (FineLine BGA) |
| Ball Pitch | 1.0 mm | — |
| Package Dimensions | 17 x 17 mm | — |
| Core Voltage | 1.8 V | — |
| I/O Bank Voltages (MultiVolt) | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Operating Temperature | -40 °C to +125 °C (industrial) | 0C to 85C (Commercial) |
| Configuration Memory | Flash (non-volatile, instant-on) | — |
| Programming Interface | JTAG (IEEE 1149.1), in-system programmable | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Lead-Free / RoHS | Lead-free, FBGA package | — |
| Mounting Type | Surface Mount (BGA) | — |
| Device | — | 5M2210Z |
| Logic Array Blocks (LABs) | — | 221 |
| User Flash Memory | — | 8192 bits |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |
| RoHS Status | — | Compliant (Pb-free ball finish) |