EPM570GF256C4N vs 5M2210ZF256C4N Vergleich
Detaillierter Direktvergleich von EPM570GF256C4N von Altera und 5M2210ZF256C4N von Altera. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Altera
EPM570GF256C4N - 570 LEs CPLD, 4ns, 212 I/O, FBGA-256 | Intel / Altera
EPM570GF256C4N ✓ AktivAltera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ AktivSpezifikationsvergleich
| Parameter | EPM570GF256C4N | 5M2210ZF256C4N |
|---|---|---|
| Marke | Altera | Altera |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,45 | $7,29 |
| Family | MAX II G | MAX V |
| Device Series | EPM570G | — |
| Logic Elements (LEs) | 570 | 1700 |
| Macrocells | 440 | — |
| User I/Os | 212 | — |
| User Flash Memory (UFM) | 8 Kbits | — |
| Speed Grade | C4 (tPD = 4 ns) | C4 (tPD ~4 ns class) |
| Pin-to-Pin Delay (tPD) | 4 ns | — |
| Internal fMAX | 304 MHz | — |
| Gehäuse | 256-ball FineLine BGA (FBGA-256) | FBGA-256 (FineLine BGA) |
| Ball Pitch | 1.0 mm | — |
| Package Dimensions | 17 x 17 mm | — |
| Core Voltage | 1.8 V | — |
| I/O Bank Voltages (MultiVolt) | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Betriebstemperatur | -40 °C to +125 °C (industrial) | 0C to 85C (Commercial) |
| Configuration Memory | Flash (non-volatile, instant-on) | — |
| Programming Interface | JTAG (IEEE 1149.1), in-system programmable | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Lead-Free / RoHS | Lead-free, FBGA package | — |
| Montageart | Surface Mount (BGA) | — |
| Device | — | 5M2210Z |
| Logic Array Blocks (LABs) | — | 221 |
| User Flash Memory | — | 8192 bits |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |
| RoHS-Status | — | Compliant (Pb-free ball finish) |