H58G56AK6QX032N vs MT53E2G64D8TN-046 Comparison

Detailed side-by-side comparison of H58G56AK6QX032N by SK hynix and MT53E2G64D8TN-046 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT53E2G64D8TN-046 MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron

MT53E2G64D8TN-046 ✓ Active

Specification Comparison

Parameter H58G56AK6QX032N MT53E2G64D8TN-046
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $13.40 $0.00
Memory Type LPDDR5 SDRAM Mobile LPDDR4X SDRAM
Density 32Gb (4GB) —
Organization 512M x 64 2G x 64
Data Rate 6400 Mbps per pin —
Bus Width x16 (x64 variant per sourcing data) —
Core Voltage (VDD) 0.5 V —
I/O Voltage (VDDQ) 0.5 V —
Interface Voltage (VDD2) 1.8 V / 1.05 V —
Package FBGA-315 556-ball LFBGA (12.4 mm x 12.4 mm)
Mounting Type Surface Mount Surface Mount
Grade Automotive —
Applications Data storage, firmware boot, embedded logging, industrial controllers, computing modules —
Standard JEDEC LPDDR5 —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Operating Temperature [DATA_NEEDED: operating temperature range] —
Reflow/MSL Rating [DATA_NEEDED: MSL level] —
Memory Size — 128 Gbit (16 GB)
Interface — Parallel
Clock Frequency — 2.133 GHz
Access Time — 3.5 ns
Speed Grade — -046 (4266 Mbps/pin)
Supply Voltage (VDD) — 1.1 V / 1.8 V (per variant)
Ball Pitch — [DATA_NEEDED: ball pitch]
Operating Temperature (AAT:C) — 0C to +95C
Operating Temperature (AIT:C) — -40C to +95C
Operating Temperature (AUT:C) — -40C to +105C
Automotive Qualification (AUT variant) — AEC-Q100 qualified
Data Bus Width — 64 bit
Write Cycle Time — 18 ns

Datasheets & Resources

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