H5AN4G6NBJR-PBC vs H5AN4G6NBJR-RDC Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-PBC by SK hynix and H5AN4G6NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter H5AN4G6NBJR-PBC H5AN4G6NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.60 $6.15
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Density 4 Gbit —
Organization 256M x 16 (268435456 words x 16 bits) 256M x 16
Supply Voltage (VDD) 1.2 V —
Interface DDR4 (double data rate, synchronous) CMOS, fully synchronous
Package Code TFBGA TFBGA (FBGA-96)
Package FBGA-96 (PBGA96), rectangular —
Number of Terminals 96 96
Mounting Type Surface Mount Surface Mount
Features Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC —
Operating Temperature [DATA_NEEDED: temperature range for -C grade] —
Data Rate / Speed Grade [DATA_NEEDED: speed grade PBC data rate] —
CAS Latency [DATA_NEEDED: CAS latency for PBC speed grade] —
Process CMOS —
Lead-Free / Halogen-Free Yes (per family datasheet, Lead-Free & Halogen-Free) Yes (per datasheet cover: Lead-Free & Halogen-Free)
Temperature Grade OTHER (per distributor listing) OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Density — 4 Gb
Supply Voltage — 1.2 V
Package Shape — Rectangular
Package Width — 7.5 mm
Self Refresh — Auto / Self Refresh
Data Mask Function — Yes
Asynchronous Reset — Yes
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

Datasheets & Resources

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