H5AN4G8NBJR-PBC vs H5AN4G8NBJR-RDC Comparison

Detailed side-by-side comparison of H5AN4G8NBJR-PBC by SK hynix and H5AN4G8NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter H5AN4G8NBJR-PBC H5AN4G8NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $2.95
Memory Density 4 Gbit —
Organization 512M x 8 512M x 8
Memory Type DDR4 SDRAM DDR4 SDRAM
Interface Type Parallel, JEDEC DDR4 —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Speed Grade PBC —
Clock Frequency [DATA_NEEDED: Clock Frequency] —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
Package 78-ball FBGA 78-ball FBGA
Mounting Type Surface Mount Surface Mount
Normal Operating Case Temperature 0C to 85C —
Extended Temperature Range up to 95C case (with increased refresh) —
Lead Free Yes —
Halogen Free Yes —
Refresh 8n prefetch, standard/auto refresh per DDR4 JEDEC Auto-refresh and self-refresh
Density — 4 Gbit
Interface — DDR4 (Double Data Rate IV)
Supply Voltage — [DATA_NEEDED: VDD supply voltage]
Data Rate — [DATA_NEEDED: speed grade Mbps]
Bank Architecture — 8 banks with 4 bank groups (x8)
Temperature Grade — [DATA_NEEDED: operating temperature range]
Termination — On-Die Termination (ODT)
RoHS Status — Lead-Free & Halogen-Free (RoHS Compliant)
Process Technology — CMOS
Manufacturer — SK hynix
Family Series — H5AN4G4/8/6NBJR

Datasheets & Resources

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