H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix
MPN: H5AN4G8NBJR-PBC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
Drop-in alternatives for H5AN4G8NBJR-PBC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5AN4G8NBJR-VKC
✅ Drop-In✓ In Stock
$2.4 / Unit
View Datasheet →H5AN4G8NBJR-UHC
✅ Drop-In✓ In Stock
$3.18 / Unit
View Datasheet →H5AN4G8NBJR-XXI
✅ Drop-In📋 Reference alternative (not in catalog)
H5AN4G8NAFR-PBC
✅ Drop-In📋 Reference alternative (not in catalog)
K4A4G085WD-BCTD
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →MT40A512M8RH-083E
✅ Drop-In✓ In Stock
$3.3 / Unit
View Datasheet →H5AN4G8NBJR-PBC Maximum Ratings & Electrical Characteristics
| Memory Density | 4 Gbit |
| Organization | 512M x 8 |
| Memory Type | DDR4 SDRAM |
| Interface Type | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | 1.2 V |
| Supply Voltage VDDQ | 1.2 V |
| Speed Grade | PBC |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C |
| Extended Temperature Range | up to 95C case (with increased refresh) |
| Lead Free | Yes |
| Halogen Free | Yes |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
H5AN4G8NBJR-PBC 0c to 85c Pin Configuration Guide
Complete pinout information for H5AN4G8NBJR-PBC (0c to 85c package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN4G8NBJR-PBC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN4G8NBJR-PBC is suitable for 6 applications: Embedded Industrial Controller Main Memory, Networking and Communication Line Cards, Consumer Electronics and Set-Top Boxes, Test and Measurement Instrumentation, Automotive-Adjacent Infotainment and Displays, Server and Data Center Memory Subsystems.
Embedded Industrial Controller Main Memory
The H5AN4G8NBJR-PBC provides 4Gb of DDR4 main memory for industrial controllers, PLCs, and edge compute modules that require both density and bandwidth. Its 512M x 8 organization pairs naturally with memory controllers that route a single x8 component per rank, simplifying PCB fanout on 4- and 6-layer boards. The 1.2V VDD/VDDQ rails keep power dissipation low enough for fanless enclosures, and the 0C to 85C normal case-temperature range covers most factory-floor conditions, with the XXC industrial variant covering -40C cold starts. DDR4's bank-group architecture sustains high random-access throughput for real-time data logging and protocol processing.
Recommended
Networking and Communication Line Cards
Switch, router, and gateway line cards use DDR4 as packet buffer and lookup table memory, where the H5AN4G8NBJR-PBC's 4Gb density and x8 organization deliver cost-effective buffering at high bandwidth. DDR4's on-die termination and fly-by address routing reduce the number of discrete termination components per rank, cutting BOM cost across multi-rank designs. The PBC speed grade supports data rates adequate for 10G-class forwarding pipelines, and the 78-ball FBGA footprint enables dense placement beside the packet processor. Thermal design should keep case temperature below 85C with forced airflow in high-utilization switches.
Recommended
Consumer Electronics and Set-Top Boxes
Set-top boxes, smart TVs, and gaming peripherals use 4Gb DDR4 components like the H5AN4G8NBJR-PBC as system memory for video decode buffers and application execution. The 512M x 8 organization allows SoCs with x8 or x16 memory controllers to be populated with one or two components, and DDR4's 1.2V operation meets consumer standby power budgets. The consumer BJR datasheet revision targets this market segment explicitly, and the lead-free, halogen-free construction supports global environmental compliance. Cost per gigabit at this density makes it a common choice across high-volume consumer platforms.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained write bandwidth, which the H5AN4G8NBJR-PBC supplies through its DDR4 bank-group architecture. The x8 organization's DM and DQS signaling simplifies calibration on instrument-grade PCBs, and 4Gb per component lets designers reach hundreds of megabytes of capture depth with a handful of parts. The normal 0C to 85C case range suits benchtop instruments, while extended operation to 95C with increased refresh accommodates confined chassis. Deterministic refresh scheduling in the controller preserves uniform capture latency.
Recommended
Automotive-Adjacent Infotainment and Displays
Non-safety infotainment, digital clusters in aftermarket systems, and industrial displays built on automotive-grade SoCs frequently require DDR4 UDIMM-class or discrete components; the H5AN4G8NBJR-PBC serves cost-sensitive variants, while the AEC-Q-qualified lines serve safety paths. Its 4Gb density supports dual-display frame buffers and navigation map storage in RAM, and the 1.2V rail eeps the memory subsystem within typical automotive PMIC outputs. Designers should select the XXC industrial variant for wide ambient conditions and validate the PBC speed bin against the SoC's supported JEDEC timing table.
Recommended
Server and Data Center Memory Subsystems
Entry-level servers, storage controllers, and microserver boards use discrete DDR4 components such as the H5AN4G8NBJR-PBC on RDIMM-like custom modules or soldered-down memory. The x8 organization with full ECC byte lane support makes single-component replacement of a x8 lane straightforward, and DDR4's bank groups improve effective bandwidth for streaming storage workloads. 4Gb density balances cost per bit against chip-select budget on modest controllers, and standardized 78-ball footprints allow qualification of second sources like Samsung K4A4G085WD and Micron MT40A512M8 for supply resilience.
Recommended
Recommended Products Summary
Engineering reference data for H5AN4G8NBJR-PBC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN4G8NBJR-VKC | H5AN4G8NBJR-XXI | H5AN4G8NAFR-PBC | K4A4G085WD-BCTD | MT40A512M8RH-083E |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - verify ball-map | 78-ball FBGA - same JEDEC | 78-ball FBGA - same JEDEC |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Samsung | Micron |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade | PBC | DDR4-2666 class (VKC) | [DATA_NEEDED] | PBC (same suffix) | DDR4-2133 class (BCTD) | DDR4-1866 class (-083E) |
| Operating Temperature | 0C to 85C (ext. 95C) | 0C to 85C (ext. 95C) | -40C to 85C | 0C to 85C (ext. 95C) | 0C to 85C | 0C to 85C |
| Environmental | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, RoHS | Lead-free, RoHS |
Key Differentiators
- Industrial temperature variant availability in same package (vs H5AN4G8NBJR-XXI)
- Faster speed bin option on the same die (vs H5AN4G8NBJR-VKC)
- Multi-vendor footprint standardization (vs K4A4G085WD-BCTD)
Design Notes
Route DDR4 address/command lines in fly-by topology with series termination toward the last component, and match DQ/DQS/DM within +-25 mils per byte lane. Keep VREF decoupling within 2 mm of the VREF ball with a 0.1uF capacitor plus 1uF bulk. The 78-ball FBGA allows via-in-pad fanout on 4-layer boards; use 0.3 mm microvias where stack-up permits. Follow the SK hynix DDR4 design guide and JEDEC DDR4 ball-map conventions to retain second-source compatibility with Samsung and Micron 4Gb x8 parts.
The datasheet requires the DRAM case temperature to stay between 0C and 85C under all operating conditions; operation between 85C and 95C is allowed only with increased refresh rate, which reduces effective bandwidth. Estimated: at 1.2V with typical DDR4 active current in the several-hundred-mA range, power dissipation per component is on the order of 0.5-1W; ensure copper pour under the FBGA or airflow to keep case temperature in the normal range, and place the hottest memory component farthest from heat sources.
Do not mix speed bins (PBC, VKC, UHC) in the same memory channel unless the controller independently trains each rank. Verify the PBC speed-bin timing table (tCK, CL, tRCD, tRP, tRC) directly from the manufacturer datasheet rather than assuming values from other suffixes. When substituting the AFR die version, compare ball-map tables first, as AFR and BJR die versions may differ. Power rails must sequence VDD before or with VDDQ per the DDR4 specification to avoid latch-up.
Compliance Information
Manufacturer datasheet states lead-free and halogen-free construction. Formal RoHS/REACH declarations must be obtained from SK hynix product documentation.
