H5AN8G4NCJR-XXC vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of H5AN8G4NCJR-xxC by SK hynix and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ ActiveSpecification Comparison
| Parameter | H5AN8G4NCJR-xxC | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.50 | $7.50 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8Gb | 4 Gb |
| Organization | x4 (H5AN8G4NCJR) | 256M x 16 |
| Supply Voltage | 1.2V | 1.35 V (also operates at 1.5 V) |
| Data Rate | [DATA_NEEDED: speed grade from xxC suffix] | 1600 Mbps |
| Package | FBGA | 96-ball TFBGA |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Mounting Type | Surface Mount | — |
| Prefetch | 8-bit | — |
| Burst Length | 8 (BL8) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Number of Terminals | — | 96 |
| CAS Latency | — | Programmable |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |