H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix
MPN: H5AN8G4NCJR-xxC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $10.1 | $1,010.00 |
| 500 | $9 | $4,500.00 |
| 1,000 | $8.5 | $8,500.00 |
Drop-in alternatives for H5AN8G4NCJR-xxC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5AN8G8NCJR-xxC
✅ Drop-In📋 Reference alternative (not in catalog)
H5AN8G6NCJR-xxC
✅ Drop-In✓ 99,999 In Stock
$6.5 / Unit
View Datasheet →MT41K256M16HA-125
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →K4B4G1646D-BYK00
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →IS43TR16256AL-125KBL
✅ Drop-In✓ 99,999 In Stock
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View Datasheet →H5AN8G4NCJR-xxC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8Gb |
| Organization | x4 (H5AN8G4NCJR) |
| Supply Voltage | 1.2V |
| Data Rate | [DATA_NEEDED: speed grade from xxC suffix] |
| Package | FBGA |
| Operating Temperature | [DATA_NEEDED: operating temperature range] |
| RoHS | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| Mounting Type | Surface Mount |
| Prefetch | 8-bit |
| Burst Length | 8 (BL8) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes |
H5AN8G4NCJR-xxC Pin Configuration
| Pin A0-A15 | Address Inputs — Row/column address inputs |
| Pin BA0-BA1 | Bank Address Inputs — Bank select |
| Pin BG0-BG1 | Bank Group Inputs — Bank group select |
| Pin DQ0-DQ3 | Data Input/Output — Data bus (x4) |
| Pin DQS | Data Strobe — Data strobe |
| Pin CK, CK# | Clock — Differential clock |
| Pin CKE | Clock Enable — Activates clock |
| Pin CS# | Chip Select — Selects device |
| Pin RAS# | Row Address Strobe — Row command |
| Pin CAS# | Column Address Strobe — Column command |
| Pin WE# | Write Enable — Write command |
| Pin ODT | On-Die Termination — Termination control |
| Pin VDD | Power Supply — 1.2V core supply |
| Pin VDDQ | I/O Power Supply — 1.2V I/O supply |
| Pin VSS | Ground — Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G4NCJR-xxC is suitable for 6 applications: Server Main Memory, Networking Equipment, Data Center Storage, High-Performance Computing, Consumer Desktop PCs, Embedded Systems.
Server Main Memory
The H5AN8G4NCJR-xxC provides high-density, high-bandwidth memory for server applications. Its 8Gb density and DDR4 speed enable large memory pools for virtualization, cloud computing, and database workloads. The x4 organization supports ECC and advanced reliability features, making it ideal for enterprise servers where data integrity is critical. The low 1.2V operation reduces power consumption in dense memory configurations, improving overall system efficiency.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G4NCJR-xxC offers the high bandwidth needed for packet processing and forwarding. Its 8Gb density allows for large routing tables and buffering, while the DDR4 interface supports high-speed data transfer. The FBGA package is suitable for compact line cards, and the low power consumption helps manage thermal budgets in dense chassis. The device's reliability ensures stable operation in 24/7 environments.
Recommended
Data Center Storage
The H5AN8G4NCJR-xxC is used in data center storage systems, including SSDs and storage servers, where high memory bandwidth and capacity are essential for caching and metadata management. Its 8Gb density enables large cache pools, improving read/write performance. The DDR4 interface provides the speed needed to keep up with NVMe and SAS controllers. The device's low power consumption is beneficial in power-constrained data centers, and its RoHS compliance meets environmental standards.
Recommended
High-Performance Computing
In HPC systems, the H5AN8G4NCJR-xxC provides the memory bandwidth required for complex simulations and scientific computing. Its 8Gb density allows for large memory footprints, while the DDR4 speed supports high data throughput. The x4 organization is often used in HPC memory modules to achieve higher capacity per rank. The device's low latency and high reliability are critical for long-running compute jobs, and its 1.2V operation reduces power consumption in large clusters.
Recommended
Consumer Desktop PCs
The H5AN8G4NCJR-xxC is suitable for high-end desktop PCs, providing the memory capacity and speed needed for gaming, content creation, and multitasking. Its 8Gb density allows for 16GB or 32GB memory configurations, while DDR4 speeds ensure smooth performance. The FBGA package is compatible with standard DIMM sockets, and the low power consumption helps keep system temperatures down. The device's reliability ensures stable operation for everyday use.
Recommended
Embedded Systems
In embedded systems, the H5AN8G4NCJR-xxC offers high-density memory for applications such as industrial controllers, medical devices, and automotive infotainment. Its 8Gb density provides ample storage for firmware and data, while the DDR4 interface supports high-speed processing. The FBGA package is suitable for compact PCBs, and the device's low power consumption is ideal for battery-powered or thermally constrained designs. Its RoHS compliance meets regulatory requirements.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G4NCJR-xxC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G8NCJR-xxC | H5AN8G6NCJR-xxC | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | FBGA | FBGA | FBGA | FBGA | FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron | Samsung |
| Density | 8Gb | 8Gb | 8Gb | 4Gb | 4Gb |
| Organization | x4 | x8 | x16 | x16 | x16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Memory Type | DDR4 | DDR4 | DDR4 | DDR3L | DDR3L |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
| Data Rate | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 1866 MT/s | 1866 MT/s |
Key Differentiators
- x4 organization enables higher density per rank (vs H5AN8G8NCJR-xxC)
- DDR4 technology with lower power consumption (vs MT41K256M16HA-125)
- Higher density per device (vs K4B4G1646D-BYK0)
Design Notes
For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 10 mils for data and address buses. Use ground planes to minimize noise and ensure proper return paths. Follow the manufacturer's layout guidelines for the FBGA package to ensure reliable soldering.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close to the pins as possible. Use a dedicated power plane for 1.2V and ensure low impedance at high frequencies. The VREF pin should be bypassed with a 0.1uF capacitor to ground. Proper power integrity is essential for stable DDR4 operation.
The FBGA package has a thermal resistance that depends on PCB design. Ensure adequate airflow and consider adding thermal vias under the package to improve heat dissipation. The device's power consumption is relatively low, but in dense memory arrays, thermal management is important to maintain reliability. Monitor junction temperature to stay within the specified range.
Compliance Information
Lead-Free and Halogen-Free per datasheet. RoHS compliant. No AEC-Q100 qualification for memory components.
