H5AN8G6NAFR-PBC vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-PBC by SK hynix and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NAFR-PBC | MT40A512M16JY-075E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.55 | $30.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Interface Type | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Package | TFBGA-96 (rectangular) | 96-FBGA (8x14) |
| Number of Terminals | 96 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| RoHS Status | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Composition | CMOS | — |
| Memory Size | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Data Rate | — | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Operating Temperature Range | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Features | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |