H5AN8G6NCJR-VKC vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-VKC by SK hynix and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NCJR-VKC | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Memory Size | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 2666 Mbps (MT/s) | 2400 MT/s |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Interface | Parallel | — |
| Operating Temperature | 0C to +95C | 0C to +85C |
| Package | FBGA-96 | 96-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lifecycle Status | Active | — |
| Memory Density | — | 8 Gbit |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Data Mask | — | DM function supported |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |