H5AN8G6NCJR-XXC vs MT41K256M16HA-125:E Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-xxC by SK hynix and MT41K256M16HA-125:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NCJR-xxC
H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-xxC β ActiveMicron Technology
MT41K256M16HA-125:E
MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125:E β ActiveSpecification Comparison
| Parameter | H5AN8G6NCJR-xxC | MT41K256M16HA-125:E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $3.10 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2666 Mbps (VKC speed grade) | β |
| Supply Voltage (VDD) | 1.2 V | 1.35 V (DDR3L) |
| VPP Supply | 2.5 V | β |
| Operating Temperature (TC) | 0Β°C to 95Β°C | β |
| Package | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Number of Banks | 8 | β |
| Burst Length | 8, 4 (with burst chop) | β |
| On-Die Termination (ODT) | Supported | β |
| Self-Refresh | Temperature-compensated (TCSR) | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Mounting Type | Surface Mount | Surface Mount |
| Clock Frequency | β | 800 MHz |
| CAS Latency | β | 13.75 ns |
| Supply Voltage (VDDQ) | β | 1.35 V |
| Number of Pins | β | 96 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (TC) |
| RoHS Status | β | Compliant |
| Data Bus Width | β | 16 bits |
| Logic Family | β | CMOS |