H5AN8G6NDJR-XNC vs H5AN8G8NDJR Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-XNC | H5AN8G8NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $24.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V (1.14V to 1.26V) |
| Package | FBGA-96 (13x7.5 mm) | FBGA-78 (7.5x11 mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| Operating Temperature | — | 0°C to +95°C (Tc) |
| CAS Latency | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |