H5AN8G6NDJR vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | K4A8G165WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | 2400 Mbps/pin (DDR4-2400) |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Interface | — | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Mounting Type | — | Surface Mount |
| Operating Temperature | — | -40C to +95C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |