H5AN8G6NDJR vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | K4A8G165WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 2400 Mbps (PC4-19200) |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | β |
| Maximum Supply Voltage (Vsup) | 1.26 V | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Burst Length | 8 (BL8), 4 (BC4) | β |
| CAS Latency | 22 cycles (at 3200 Mbps) | β |
| Access Mode | Multi Bank Page Burst | β |
| JESD-30 Code | R-PBGA-B96 | β |
| RoHS | Compliant | β |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | β |
| Memory Size | β | 8 Gb (1 GB) |
| Memory Organization | β | 512M x 16 |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | -40C to +95C |
| Interface | β | DDR4 (Double Data Rate, synchronous) |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| ZQ Calibration | β | Yes |
| CRC / CA Parity | β | Yes (CRC function) |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Refresh | β | Auto-refresh and self-refresh |
| RoHS Status | β | Compliant |