H5AN8G6NDJR vs K4A8G165WB-BCRC 对比
详细并排对比 H5AN8G6NDJR 出自 SK hynix 和 K4A8G165WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR | K4A8G165WB-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $35.00 | $12.57 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2400 Mbps (PC4-19200) |
| 电源电压 | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| 封装 | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS 延迟 | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| 特性 | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| 存储容量 | — | 8 Gb (1 GB) |
| Memory Organization | — | 512M x 16 |
| Technology | — | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | — | 0.8 mm |
| 安装类型 | — | Surface Mount |
| 工作温度 | — | -40C to +95C |
| 接口 | — | DDR4 (Double Data Rate, synchronous) |
| On-Die Termination | — | Yes (ODT with dynamic ODT) |
| ZQ Calibration | — | Yes |
| CRC / CA Parity | — | Yes (CRC function) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS 状态 | — | Compliant |