H5AN8G6NDJR vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps |
| Supply Voltage | 1.2 V | — |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96FBGA |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 cycles (at 3200 Mbps) | [DATA_NEEDED: CAS Latency] |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Die Generation | — | B-die |
| Mounting Type | — | Surface Mount (BGA) |
| Interface | — | DDR4 (parallel, double data rate) |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| RoHS Status | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |