H5AN8G6NDJR vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA |
| Number of Terminals | 96 | β |
| Maximum Supply Voltage (Vsup) | 1.26 V | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Burst Length | 8 (BL8), 4 (BC4) | β |
| CAS Latency | 22 cycles (at 3200 Mbps) | [DATA_NEEDED: CL value] |
| Access Mode | Multi Bank Page Burst | β |
| JESD-30 Code | R-PBGA-B96 | β |
| RoHS | Compliant | Compliant |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | β |
| Total Density | β | 8 Gb |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |