H5AN8G8NCJR-VKC vs H5AN8G8NCJR-XNC Comparison

Detailed side-by-side comparison of H5AN8G8NCJR-VKC by SK hynix and H5AN8G8NCJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Active

Specification Comparison

Parameter H5AN8G8NCJR-VKC H5AN8G8NCJR-XNC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $28.13 $30.69
Memory Type DDR4 SDRAM (volatile) DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit
Memory Organization 1G x 8 —
Data Rate 2666 Mbps/pin 3200 Mbps (DDR4-3200)
Clock Frequency 1.6 GHz 1.6 GHz
Supply Voltage (VDD) 1.14 V to 1.26 V (1.2 V class) —
Operating Current (typ) 30 mA —
Standby Current (typ) 3 mA —
Operating Temperature 0C to +85C 0 C to +85 C
Package FBGA-78 (78-ball fine-pitch BGA) 78-ball FBGA, 7.5 mm x 11 mm
Mounting Type Surface Mount Surface Mount
Interface Parallel (DDR4) DDR4 (8-bit data interface)
Auto Self-Refresh Yes —
Data Mask Function Yes —
Dynamic On-Chip Termination (ODT) Yes —
Asynchronous Reset Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Auto Precharge Yes —
RoHS Status Compliant Compliant
CAS Latency [DATA_NEEDED: CAS Latency] —
Refresh Rate [DATA_NEEDED: refresh period] —
Organization — 1 Gb x 8
Supply Voltage — 1.14 V to 1.26 V (1.2 V nominal)
Architecture — Bank-group based DDR4
Refresh — Auto self-refresh
Precharge — Auto precharge
On-Chip Termination — Dynamic ODT
Calibration — ZQ calibration, write leveling
Error Handling — CRC function
Reset — Asynchronous reset
Data Mask — Data mask function
Current - Operating — 39 mA
Current - Standby — 30 mA
Lead-Free / Halogen-Free — Yes

Datasheets & Resources

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