H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix
MPN: H5AN8G8NCJR-VKC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $35.16 | $35.16 |
| 10 | $33.4 | $334.00 |
| 100 | $31.65 | $3,165.00 |
| 500 | $29.89 | $14,945.00 |
| 1,000 | $28.13 | $28,130.00 |
Drop-in alternatives for H5AN8G8NCJR-VKC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →H5AN8G8NCJR-VKC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM (volatile) |
| Memory Size | 8 Gbit |
| Memory Organization | 1G x 8 |
| Data Rate | 2666 Mbps/pin |
| Clock Frequency | 1.6 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | 30 mA |
| Standby Current (typ) | 3 mA |
| Operating Temperature | 0C to +85C |
| Package | FBGA-78 (78-ball fine-pitch BGA) |
| Mounting Type | Surface Mount |
| Interface | Parallel (DDR4) |
| Auto Self-Refresh | Yes |
| Data Mask Function | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| Asynchronous Reset | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Auto Precharge | Yes |
| RoHS Status | Compliant |
H5AN8G8NCJR-VKC fbga-78 (78-ball fine-pitch bga) Pin Configuration Guide
Complete pinout information for H5AN8G8NCJR-VKC (fbga-78 (78-ball fine-pitch bga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN8G8NCJR-VKC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G8NCJR-VKC is suitable for 6 applications: Desktop and Notebook Main Memory Modules, Server and Workstation Memory, Industrial PCs and Embedded Controllers, Networking and Telecom Equipment, Set-Top Boxes and Smart TVs, Test and Measurement Instruments.
Desktop and Notebook Main Memory Modules
The H5AN8G8NCJR-VKC is ideally suited for main memory applications requiring large density and high bandwidth, making it a natural component for UDIMM and SODIMM module builds. Its 8Gb density in a 1G x 8 organization lets a 16-chip module deliver 16 GB, while the DDR4-2666 data rate and 1.6 GHz clock domain supply up to 21.3 GB/s per 64-bit channel. Dynamic on-chip termination, write leveling, and ZQ calibration are all required by the DDR4 module standard, and this device provides them natively. The 1.14V to 1.26V supply keeps module power within the DDR4 budget; multi-rank designs should budget roughly 30 mA per device of operating current in power calculations.
Recommended
Server and Workstation Memory
Server RDIMM and workstation memory subsystems benefit from the H5AN8G8NCJR-VKC's combination of 8Gb density, DDR4-2666 bandwidth, and CRC support. The CRC function helps protect command/address integrity on multi-rank, heavily loaded buses where crosstalk is severe, and asynchronous reset allows deterministic recovery across reboots. SK hynix 8Gb DDR4 devices offer fully synchronous operation referenced to both clock edges, matching standard server memory-controller training flows. For high-capacity builds, pair this device with 16Gb H5ANAG8NDMR-class parts; verify rank configuration, ODT settings, and refresh intervals (including 2x/4x temperature-compensated refresh above 85C ambient chassis zones) against the platform BIOS memory reference code.
Recommended
Industrial PCs and Embedded Controllers
Industrial PCs, edge controllers, and factory-automation gateways use the H5AN8G8NCJR-VKC where 0C to +85C commercial-industrial temperature coverage suffices. The 8Gb device provides 1 GB of DRAM per chip, letting a two-chip design reach 2 GB of 64-bit memory on a compact board. Features such as auto self-refresh preserve memory contents during low-power standby, and dynamic ODT simplifies fly-by topology routing on dense PCBs. Designers should keep the DDR4 bus short (under ~100 mm), length-match DQS to DQ within +/-25 mils, and confirm the controller's ZQ calibration timing; industrial ambient vibration is not a factor for BGA solder joints at these ball pitches when proper reflow profiles are used.
Recommended
Networking and Telecom Equipment
Routers, switches, and 5G small-cell equipment demand sustained packet-buffer bandwidth that the H5AN8G8NCJR-VKC delivers through its DDR4-2666 interface. The 1G x 8 organization suits 64-bit or 72-bit (with ECC) buses using eight or nine devices respectively, and the CRC function plus data mask support align with telecom packet-buffer controller requirements. Typical operating current near 30 mA per device allows dense buffer arrays within the power budget of fanless networking hardware. Because network equipment often runs continuously at elevated internal temperatures, verify junction margins at +85C ambient, enable temperature-compensated refresh, and validate AC timing with the platform memory controller's training algorithms under worst-case DQ loading.
Recommended
Set-Top Boxes and Smart TVs
Set-top box and smart-TV SoC platforms with DDR4 controllers commonly reference 8Gb x8 DRAM such as the H5AN8G8NCJR-VKC for 1 GB-class system memory. The device's 1.2V operation reduces total platform power compared with DDR3 solutions, supporting energy-star style standby budgets, while auto self-refresh keeps frame buffers and application memory alive in low-power suspend modes. Its 78-ball FBGA enables compact two-chip (2 GB) layouts behind the SoC. Layout guidance: keep the memory within 60 mm of the SoC, use daisy-chained address routing with on-chip termination, and follow the SoC vendor's DDR4 layout guideline for ZQ ball placement and reference-plane continuity to pass DDR margin testing.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use DDR4 SDRAM such as the H5AN8G8NCJR-VKC for deep acquisition-memory capture buffers. The 2666 Mbps data rate sustains streaming write bandwidth into capture memory, while the 8Gb density extends record length per chip. CRC and write leveling support reliable operation on the electrically long buses typical of instrument mainboards, and the asynchronous reset pin allows deterministic clearing between acquisitions. For thermal design, budget the ~30 mA operating current per device plus I/O power; a nine-device 72-bit array dissipates roughly 0.3 W of core power (estimated), which is manageable with board-level copper pours. Verify refresh timing against the instrument controller's memory-training firmware.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G8NCJR-VKC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G8NAFR-VKC | H5AN8G8NCJR-UHC | K4A8G085WC-BCWE | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same (JEDEC DDR4 x8 footprint) | FBGA-78 - same (JEDEC DDR4 x8 footprint) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung Electronics | Micron Technology |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 2666 Mbps | [DATA_NEEDED] | 2666 Mbps | 2666 Mbps |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Operating Temperature | 0C to +85C | 0C to +85C | [DATA_NEEDED] | 0C to +85C | 0C to +85C |
| Unit Price (qty 1) | $35.16 (as of 2026-09-04) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Special Features | Auto self-refresh, dynamic ODT, CRC, write leveling, ZQ cal | Same JEDEC DDR4 feature set | Same feature set, faster bin | JEDEC DDR4 feature set | JEDEC DDR4 feature set |
Key Differentiators
- Balanced mainstream speed/density bin (vs H5AN8G8NCJR-PBC)
- Lower cost at reduced speed (vs H5AN8G8NCJR-UHC)
- Second-source availability (vs K4A8G085WC-BCWE)
Design Notes
DDR4-2666 fly-by topology requires strict length control: keep address/command stubs minimal, route clock pairs differentially with intra-pair skew under 5 mils, and match DQS to its DQ byte lane within +/-25 mils. Enable dynamic ODT for reads and writes per the controller's training algorithm, and land the ZQ ball with a dedicated 240-ohm 1% resistor to a clean ground island, isolated from switching noise. Run SI simulation (IBIS models available from SK hynix) at worst-case corner before tape-out.
Provide 1.14V-1.26V VDD with a dedicated DDR4 PMIC rail and bulk (100 uF) plus local decoupling (0.1 uF and 0.01 uF) at every second ball cluster. Do not forget the VPP rail (2.5V nominal on JEDEC platforms) where the controller/module platform requires it. Estimated core dissipation per device at 30 mA x 1.2 V is about 36 mW, so thermal design for small arrays is dominated by I/O switching power - size copper pours per platform guideline rather than core power.
Do not mix CJR and AFR die revisions on the same rank without re-running memory training - timing tables differ slightly. Confirm the speed bin suffix (-VKC = 2666/0-85C) matches the controller's programmed CAS latency; under-binning wastes bandwidth, over-binning causes training failures. Always connect RESET# (asynchronous reset) to the controller, never leave it floating, and respect the ZQ calibration interval programmed in MR registers.
Use a solid, unbroken reference plane under all DDR4 nets; avoid splitting VDD/VSS planes beneath the bus. Keep the memory within 100 mm of the controller, prefer HDI microvias for escape routing from the 0.8 mm-pitch FBGA-78 ball field, and follow the SoC or memory-controller vendor's DDR4 layout checklist for trace impedance (40 ohm single-ended, 80 ohm differential typical). Back-drill long via stubs on 8+ layer boards to preserve eye margin at 2666 Mbps.
Compliance Information
RoHS compliance per LCSC/JLCPCB product listings. REACH, halogen-free, and conflict-minerals declarations not stated in provided data - request documentation from SK hynix.
