H5ANAG4NBJR-RDC vs H5ANAG4NBJR-UHC Comparison

Detailed side-by-side comparison of H5ANAG4NBJR-RDC by SK hynix and H5ANAG4NBJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG4NBJR-RDC H5ANAG4NBJR-UHC
Brand SK hynix SK hynix
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.75 $8.09
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) 4 Gbit
Organization 4G x 4 256M x16
Supply Voltage VDD 1.2 V —
Data Rate 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) —
Package 78-ball FBGA FBGA-96 (PBGA96)
Mounting Type Surface Mount Surface Mount (BGA)
Prefetch 16n (bank group architecture) —
Interface SSTL-12 CMOS, DDR4 (double data rate)
Features Bank groups, CA parity, data CRC, ODT, DLL-off mode —
Refresh Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] —
Operating Temperature (case) -40C to +85C (industrial; extended to 95C per datasheet conditions) —
Temperature Grade Suffix RDC - industrial temperature, lead-free, halogen-free —
RoHS Status Compliant (lead-free / halogen-free per RDC suffix) Compliant
VDDQ 1.2 V —
Product Family SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series —
Supply Voltage (VDD) — 1.14 V to 1.26 V (nominal 1.2 V)
Clock / Data Rate — 1.6 GHz
Operating Temperature — -40C to +95C
Data Mask (DM) — Yes
Asynchronous Reset — Yes
On-Die Termination (ODT) — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Self-Refresh — Yes
CAS Latency — [DATA_NEEDED: CAS Latency / speed bin detail]

Datasheets & Resources

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