H5ANAG4NBJR-RDC vs H5ANAG4NBJR-UHC 对比

详细并排对比 H5ANAG4NBJR-RDC 出自 SK hynix 和 H5ANAG4NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ 量产中
SK hynix
H5ANAG4NBJR-UHC H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix

H5ANAG4NBJR-UHC ✓ 量产中

规格对比

参数 H5ANAG4NBJR-RDC H5ANAG4NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.75 $8.09
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) 4 Gbit
存储组织 4G x 4 256M x16
Supply Voltage VDD 1.2 V —
数据速率 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) —
封装 78-ball FBGA FBGA-96 (PBGA96)
安装类型 Surface Mount Surface Mount (BGA)
Prefetch 16n (bank group architecture) —
接口 SSTL-12 CMOS, DDR4 (double data rate)
特性 Bank groups, CA parity, data CRC, ODT, DLL-off mode —
Refresh Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] —
Operating Temperature (case) -40C to +85C (industrial; extended to 95C per datasheet conditions) —
Temperature Grade Suffix RDC - industrial temperature, lead-free, halogen-free —
RoHS 状态 Compliant (lead-free / halogen-free per RDC suffix) Compliant
VDDQ 1.2 V —
Product Family SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series —
Supply Voltage (VDD) — 1.14 V to 1.26 V (nominal 1.2 V)
Clock / Data Rate — 1.6 GHz
工作温度 — -40C to +95C
Data Mask (DM) — Yes
Asynchronous Reset — Yes
On-Die Termination (ODT) — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Self-Refresh — Yes
CAS 延迟 — [DATA_NEEDED: CAS Latency / speed bin detail]

数据手册与资源

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